NEG - Non-Ergodic Generator is a nano-scale semiconductor component designed for mass production, similar to how transistors are integrated into modern chips. What sets NEG apart is its revolutionary dual functionality:
Energy Generation: Produces electricity without relying on fuel, solar energy, nuclear or temperature gradients.
Cooling Power: Simultaneously cools its environment, making it ideal for energy-efficient applications.
1 chip can power a sensor or smartphone.
1,000 chips can generate 1 kW of power and provide 1 kW of cooling for a household.
No fuel. No maintenance. No environmental dependency.
NEG is the first ever electron ratchet, sensitive enough to transform the kinetic energy of electrons into externally usable electric power.
In the mid-20th century, the transistor revolutionized technology, becoming the foundation of the digital age. Without it, there would be no computers, smartphones, nor modern cars. This tiny semiconductor component became the most produced technical element in human history, creating industries worth trillions. As the first transistor was already invented and patented in the nineteen-twenties, the world's investors (government and private) all failed for 20 years to recognise the transistor's disruptive potential and secure dominance in the burgeoning digital market.
What if another such opportunity existed today? Now, there is such a chance. Introducing NEG (Non-Ergodic Generator) – the next game-changing innovation.
It decentralizes power generation like never before. Think IT devices, medical implants, sensors way out in the wilderness, stuff in space and entire cities.
They could potentially run forever just harvesting ambient heat.
No batteries, no wires needed. - the parts run forever.
Explore our Technical FAQ for detailed answers to these and other frequently asked questions about NEG.
From space missions to mobile devices, NEG delivers true energy independence with zero batteries, zero fuel, and zero maintenance.
SPACE
SENSORS
DATA CENTERS
Power for laptops, smartphones, and small devices.
MOBILE
HOME & OFFICE
Surface height modulation in strain relaxation and its smoothing using solid state crystallization in InAs quantum-well growth on GaAs
https://doi.org/10.1063/5.0326370
SiO2 passivation and ionic-liquid gating for (In,Ga)As-InP narrow channels
https://www.sciencedirect.com/science/article/abs/pii/S0040609025000987
Giant enhancement of magnetoresistance change and anomalous Landau-level filling in harmonic two-subband system
https://papers.ssrn.com/sol3/papers.cfm?abstract_id=5345442
Contact us for more information: neg@institut-kurz.de
neg@institut-kurz.de